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NPT1015B

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GaN Wideband Transistor


Description
NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 3.5 GHz  28 V Operation  12 dB Gain @ 2.5 GHz  54 % Drain Efficiency @ 2.5 GHz  100 % RF Tested  Standard metal ceramic package with bolt down flange  RoHS* Compliant Description The N...



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NPT1015B

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