11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Description
FSS130D, FSS130R
June 1998
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Ru...