N-Channel MOSFET. CEU16N10 Datasheet

CEU16N10 MOSFET. Datasheet pdf. Equivalent

Part CEU16N10
Description N-Channel MOSFET
Feature CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) .
Manufacture CET
Datasheet
Download CEU16N10 Datasheet



CEU16N10
CED16N10/CEU16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 13.3A, RDS(ON) = 120m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
100
±20
13.3
53
43
0.34
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2013.Mar
http://www.cet-mos.com



CEU16N10
CED16N10/CEU16N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 100, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
1
100
-100
V
µA
nA
nA
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.5A
VDS = 10V, ID = 6.5A
2
4V
100 120 m
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
530
100
pF
pF
Crss 22 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 13.3A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 13.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
15 40 ns
2.9 7 ns
32 70 ns
7 15 ns
12 16 nC
3 nC
4.1 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 13.3A
13.3 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d. L=0.5mH, IAS=13.3A, VDD=25V, RG=25Ω, Starting TJ=25 C
2





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