Planar Transistor. 2SC2786 Datasheet

2SC2786 Transistor. Datasheet pdf. Equivalent

Part 2SC2786
Description NPN Silicon Epitaxial Planar Transistor
Feature 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner.
Manufacture Bluecolour
Datasheet
Download 2SC2786 Datasheet



2SC2786
2SC2786 NPN Silicon Epitaxial Planar Transistor
for FM RF amplifier and local oscillator of FM tuner.
The transistor is subdivided into three groups
M, L, and K, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Features
1) High gain bandwidth product
2) Small output capacitance
3) Low noise figure
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
TS
Value
30
20
4
20
20
250
150
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
Page 1 of 5
7/15/2011



2SC2786
Characteristics at Tamb=25 OC
Parameter
Symbol
DC Current Gain
at VCE=6V, IC=1mA
Current Gain Group
M
L
K
hFE
hFE
hFE
Collector Cutoff Current
at VCB=30V
Emitter Cutoff Current
at VEB=4V
Base Emitter Voltage
at VCE=6V, IC=1mA
Collector Saturation Voltage
at IC=10mA, IB=1mA
Gain Bandwidth Product
at VCE=6V, IE=-1mA
Power Gain
ICBO
IEBO
VBE
VCE(sat)
fT
at VCE=6V, IE=-1mA
f=100MHz, RG=50
Collector Base Time Constant
at VCE=6V, IE=-1mA, f=31.9MHz
Output Capacitance
at VCB=6V, f=1MHz
Noise Figure
Gpe
CCrb’b
COB
at VCE=6V, IE=-1mA
f=100MHz, RG=50
NF
Min.
40
60
90
-
-
-
-
400
18
-
-
-
Typ.
-
-
-
-
-
0.72
0.1
600
22
12
1
3.0
Max.
80
120
180
0.1
0.1
-
0.3
-
-
15
1.3
5
Unit
-
-
-
μA
μA
V
V
MHz
dB
Ps
pF
dB
Page 2 of 5
7/15/2011





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