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2SA614

Silicon PNP Power Transistor

Description

isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium pow...

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