Power MOSFET. AUIRF3710ZS Datasheet

AUIRF3710ZS MOSFET. Datasheet pdf. Equivalent

Part AUIRF3710ZS
Description Power MOSFET
Feature AUTOMOTIVE GRADE PD - 97470 AUIRF3710Z AUIRF3710ZS Features O Low On-Resistance O 175°C Operating .
Manufacture International Rectifier
Datasheet
Download AUIRF3710ZS Datasheet

AUTOMOTIVE GRADE PD - 97470 AUIRF3710Z AUIRF3710ZS Feature AUIRF3710ZS Datasheet
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AUIRF3710ZS
AUTOMOTIVE GRADE
PD - 97470
AUIRF3710Z
AUIRF3710ZS
Features
O Low On-Resistance
O 175°C Operating Temperature
O Fast Switching
O Fully Avalanche Rated
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified *
Description
www.DataSheetS4pUe.ccoifmically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 18mΩ
G
ID = 59A
S
TO-220AB
AUIRF3710Z
D2Pak
AUIRF3710ZS
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
59 A
42
240
160 W
Linear Derating Factor
1.1 W/°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
± 20
170
200
See Fig.12a,12b,15,16
-55 to + 175
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
kMounting torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.92
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
3/19/10



AUIRF3710ZS
AUIRF3710Z/S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250μA
Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA
fStatic Drain-to-Source On-Resistance ––– 14 18 mΩ VGS = 10V, ID = 35A
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250μA
Forward Transconductance
35 ––– ––– S VDS = 50V, ID = 35A
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
www.DataSheetD4Uy.cnoammic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Qg Total Gate Charge
––– 82 120 nC ID = 35A
Qgs Gate-to-Source Charge
––– 19 28
VDS = 80V
fQgd
Gate-to-Drain ("Miller") Charge
––– 27 40
VGS = 10V
td(on)
Turn-On Delay Time
––– 17 ––– ns VDD = 50V
tr Rise Time
––– 77 –––
ID = 35A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 41 –––
––– 56 –––
fRG = 6.8Ω
VGS = 10V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS Internal Source Inductance
––– 7.5 –––
6mm (0.25in.)
from package
G
and center of die contact
S
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2900 –––
––– 290 –––
––– 150 –––
––– 1130 –––
––– 170 –––
––– 280 –––
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 59
MOSFET symbol
D
(Body Diode)
A showing the
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 240
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 35A, VGS = 0V
––– 50 75
––– 100 160
fns TJ = 25°C, IF = 35A, VDD = 25V
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.27mH,
RG = 25Ω, IAS = 35A, VGS =10V. Part not
recommended for use above this value.
ƒ ISD 35A, di/dt 380A/μs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† This value determined from sample failure population,
starting TJ = 25°C, L = 0.27mH,RG = 25Ω, IAS = 35A, VGS =10V
‡ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
‰ This is only applied to TO-220AB pakcage.
2 www.irf.com





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