Power MOSFET. NTLUS3A90PZ Datasheet

NTLUS3A90PZ MOSFET. Datasheet pdf. Equivalent

Part NTLUS3A90PZ
Description Power MOSFET
Feature NTLUS3A90PZ Power MOSFET −20 V, −5.0 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package .
Manufacture ON Semiconductor
Datasheet
Download NTLUS3A90PZ Datasheet

NTLUS3A90PZ Power MOSFET −20 V, −5.0 A, mCoolt Single P−Cha NTLUS3A90PZ Datasheet
NTLUS3A90PZC Power MOSFET −20 V, −5.0 A, mCoolt Single P−Ch NTLUS3A90PZC Datasheet
Recommendation Recommendation Datasheet NTLUS3A90PZ Datasheet




NTLUS3A90PZ
NTLUS3A90PZ
Power MOSFET
20 V, 5.0 A, mCoolt Single PChannel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving
Lowest RDS(on) in 1.6x1.6 Package
ESD Protected
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Side Load Switch
PA Switch and Battery Switch
Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20
±8.0
4.0
2.9
5.0
1.5
V
V
A
W
t 5 s TA = 25°C
2.3
Continuous Drain Steady
Current (Note 2)
State
TA = 25°C
TA = 85°C
ID
2.6
1.9
A
Power Dissipation (Note 2)
TA = 25°C
PD
0.6 W
Pulsed Drain Current
tp = 10 ms
IDM
17 A
Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
0.84
A
Lead Temperature for Soldering Purposes TL 260 °C
(1/8from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
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V(BR)DSS
20 V
MOSFET
RDS(on) MAX
62 mW @ 4.5 V
95 mW @ 2.5 V
140 mW @ 1.8 V
230 mW @ 1.5 V
ID MAX
5.0 A
S
G
D
PChannel MOSFET
6 UDFN6
CASE 517AU
1 mCOOLt
MARKING
DIAGRAM
1
AD MG
G
AD = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
September, 2010 Rev. 2
1
Publication Order Number:
NTLUS3A90PZ/D



NTLUS3A90PZ
NTLUS3A90PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
RθJA
RθJA
RθJA
Max Units
84 °C/W
55
200
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
ID = 250 mA, ref to 25°C
20
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 4.0 A
VGS = 2.5 V, ID = 2.0 A
VGS = 1.8 V, ID = 1.2 A
VGS = 1.5 V, ID = 0.5 A
VDS = 10 V, ID = 3.0 A
0.4
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
VGS = 0 V, f = 1 MHz,
VDS = 10 V
VGS = 4.5 V, VDS = 10 V;
ID = 3.0 A
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 10 V,
ID = 3.0 A, RG = 1 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 1.0 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dis/dt = 100 A/ms,
tb IS = 1.0 A
Reverse Recovery Charge
QRR
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
5. Pulse Test: pulse width 300 ms, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Typ
8.0
3.0
54
74
104
137
10
950
90
85
12.3
0.9
1.6
3.3
7.9
15.7
34.8
28.5
0.74
0.62
11.8
8.5
3.3
6.0
Max
1.0
10
±10
1.0
62
95
140
230
1.2
Units
V
mV/°C
mA
mA
V
mV/°C
mW
S
pF
nC
ns
V
ns
nC
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