IGBT Module. MIO1200-33E11 Datasheet

MIO1200-33E11 Module. Datasheet pdf. Equivalent


Part MIO1200-33E11
Description IGBT Module
Feature Advanced Technical Information MIO 1200-33E11 IGBT Module Single switch Short Circuit SOA Capabili.
Manufacture IXYS
Datasheet
Download MIO1200-33E11 Datasheet


Advanced Technical Information MIO 1200-33E11 IGBT Module MIO1200-33E11 Datasheet
Recommendation Recommendation Datasheet MIO1200-33E11 Datasheet




MIO1200-33E11
Advanced Technical Information
MIO 1200-33E11
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80 = 1200 A
VCES
= 3300 V
VCE(sat) typ. = 3.1 V
CC C
C' 5 7 9
3
G
2
E'
1
EE
E
46
8
IGBT
Symbol
VCES
VGES
IC80
ICM
tSC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
VCC = 2500 V; VCEM CHIP = < 3300 V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
3300
V
± 20 V
1200
A
2400
A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 1200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 240 mA; VCE = VGE
ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
Eon Inductive load; TVJ = 125°C; VGE = ±15 V;
Eoff VCC = 1800V; IC = 1200A; RG = 1Ω; Lσ = 100nH
RthJC
Collector emitter saturation voltage is given at chip level
3.1 V
3.8 V
6 8V
120 mA
500 nA
1750
2000
mJ
mJ
0.0085 K/W
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-3



MIO1200-33E11
Advanced Technical Information
Diode
Symbol
IF80
IFSM
Conditions
Maximum Ratings
TC = 80°C
VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave
1200
12000
A
A
Symbol
Conditions
VF
IF = 1200 A; TVJ = 25°C
TVJ = 125°C
IRM
t
rr
QRR
Erec
VCC = 1800 V; IC = 1200 A;
VGE = ±15 V; RG = 1 Ω; TVJ = 125°C
Inductive load; Lσ = 100nH
R
thJC
Forward voltage is given at chip level
Characteristic Values
min. typ. max.
2.30 V
2.35 V
1680
800
1320
1740
A
ns
µC
mJ
0.017 K/W
Module
Symbol
TJM
TVJ
Tstg
Md
Conditions
max junction temperature
Operatingtemperature
Storage temperature
Mounting torque Base-heatsink, M6 screws
Main terminals, M8 screws
Maximum Ratings
+125
-40...+125
-40...+125
°C
°C
°C
4-6
8 - 10
Nm
Nm
Symbol
dA
d
S
VISOL
VE
CTI
Lσ
R *term-chip
RthCH
Weight
Conditions
Characteristic Values
min. typ. max.
Clearance distance
Surface creepage
distance
terminal to base
terminal to terminal
terminal to base
terminal to terminal
26
26
56
56
mm
mm
mm
mm
1 min, f = 50 Hz
10500
V~
Partial discharge extinction voltage
f = 50 Hz, QPD 10pC
Comperative tracking index
5100
600
V
Module stray inductance, C to E terminal
18 nH
Resistance terminal to chip
0.12 m
per module; λ grease = 1 W/m•K
0.006
K/W
1500
g
*) V = VCE(sat) + R ·term-chip IC resp. V = VF + R ·term-chip IF
MIO 1200-33E11
2-3
© 2004 IXYS All rights reserved







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)