STQ1HN60K3-AP
N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package
Datasheet − production data
3 2 1
TO-92
Figure 1. Internal schematic diagram
D(2)
Features
Order code
VDS
STQ1HN60K3-AP 600 V
RDS(on) max
8Ω
ID PTOT 0.4 A 3 W
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrin...
