Pch MOSFET. RZR040P01 Datasheet

RZR040P01 MOSFET. Datasheet pdf. Equivalent


Part RZR040P01
Description 1.5V Drive Pch MOSFET
Feature 1.5V Drive Pch MOSFET RZR040P01 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance.
Manufacture Rohm
Datasheet
Download RZR040P01 Datasheet


1.5V Drive Pch MOSFET RZR040P01 zStructure Silicon P-channe RZR040P01 Datasheet
Recommendation Recommendation Datasheet RZR040P01 Datasheet




RZR040P01
1.5V Drive Pch MOSFET
RZR040P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZR040P01
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 When mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
12
±10
±4
±16
0.8
16
1.0
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
When mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
125
Unit
°C / W
zDimensions (Unit : mm)
TSMT3
SOT-346T
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) Gate
(2) Source
(3) Drain
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : YE
zInner circuit
(3)
2
(1)
1
1 ESD PROTECTION DIODE (2)
2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A



RZR040P01
RZR040P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
22 30 mID= 4A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
30 42 mID= 2A, VGS= 2.5V
40 60 mID= 2A, VGS= 1.8V
Forward transfer admittance
55 110 mID= 0.8A, VGS= 1.5V
Yfs 6.5
S VDS= 6V, ID= 4A
Input capacitance
Ciss
2350
pF VDS= 6V
Output capacitance
Coss 310 pF VGS=0V
Reverse transfer capacitance Crss
280 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 11
tr 70
td (off)
380
tf 210
ns VDD 6V
ns ID= 2A
VGS= 4.5V
ns RL 3
ns RG=10
Total gate charge
Qg 30 nC VDD 6V RL 1.5
Gate-source charge
Qgs 4.0 nC ID= 4A
RG=10
Gate-drain charge
Qgd 3.5 nC VGS= 4.5V
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
− −1.2 V
Pulsed
Conditions
IS= 4A, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)