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SPB08P06PG

Infineon Technologies

Power-Transistor


Description
SIPMOS® Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175°C operating temperature Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO2...



Infineon Technologies

SPB08P06PG

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