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Power-Transistor. IPD90N04S3-H4 Datasheet

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Power-Transistor. IPD90N04S3-H4 Datasheet






IPD90N04S3-H4 Power-Transistor. Datasheet pdf. Equivalent




IPD90N04S3-H4 Power-Transistor. Datasheet pdf. Equivalent





Part

IPD90N04S3-H4

Description

Power-Transistor



Feature


OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode • Auto motive AEC Q101 qualified • MSL1 up t o 260°C peak reflow • 175°C operati ng temperature • Green package (RoHS compliant) • 100% Avalanche tested I PD90N04S3-H4 Product Summary V DS R DS (on),max ID 40 V 4.3 mΩ 90 A PG-TO2 52-3-11 Type IPD90N04S3-H4 Package M arking PG-TO252-3-11 QN04H4 Maxim.
Manufacture

Infineon Technologies

Datasheet
Download IPD90N04S3-H4 Datasheet


Infineon Technologies IPD90N04S3-H4

IPD90N04S3-H4; um ratings, at T j=25 °C, unless otherw ise specified Parameter Symbol Condi tions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V G S=10 V2) Pulsed drain current2) I D,p ulse T C=25 °C Avalanche energy, sing le pulse2) E AS I D=45 A Avalanche cur rent, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operati.


Infineon Technologies IPD90N04S3-H4

ng and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 90 360 330 90 ±20 115 -55 ... +175 55/175/56 Unit A mJ A V W ° C Rev. 1.0 page 1 2008-08-01 IPD90N 04S3-H4 Parameter Symbol Conditions Thermal characteristics2) Thermal res istance, junction - case SMD version, d evice on PCB R thJC R thJA minimal fo otprint 6 cm2 coolin.


Infineon Technologies IPD90N04S3-H4

g area3) min. Values typ. Unit max. - - 1.3 K/W - - 62 - - 40 Electrical c haracteristics, at T j=25 °C, unless o therwise specified Static characterist ics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - -V Gate threshold voltage V GS(th) V DS= V GS, I D=65 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 .

Part

IPD90N04S3-H4

Description

Power-Transistor



Feature


OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode • Auto motive AEC Q101 qualified • MSL1 up t o 260°C peak reflow • 175°C operati ng temperature • Green package (RoHS compliant) • 100% Avalanche tested I PD90N04S3-H4 Product Summary V DS R DS (on),max ID 40 V 4.3 mΩ 90 A PG-TO2 52-3-11 Type IPD90N04S3-H4 Package M arking PG-TO252-3-11 QN04H4 Maxim.
Manufacture

Infineon Technologies

Datasheet
Download IPD90N04S3-H4 Datasheet




 IPD90N04S3-H4
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD90N04S3-H4
Product Summary
V DS
R DS(on),max
ID
40 V
4.3 m
90 A
PG-TO252-3-11
Type
IPD90N04S3-H4
Package
Marking
PG-TO252-3-11 QN04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=45 A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
90
360
330
90
±20
115
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-08-01




 IPD90N04S3-H4
IPD90N04S3-H4
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.3 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=65 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
-
1 µA
Gate-source leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=90 A
-
-
-
- 100
- 100 nA
3.4 4.3 m
Rev. 1.0
page 2
2008-08-01




 IPD90N04S3-H4
IPD90N04S3-H4
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=90 A, R G=3.5
-
-
-
-
-
-
-
3000
850
130
20
13
30
10
3900 pF
1100
200
- ns
-
-
-
Q gs - 18 24 nC
Q gd V DD=32 V, I D=90 A,
Q g V GS=0 to 10 V
-
-
12 18
46 60
V plateau
- 5.6 - V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=90 A,
T j=25 °C
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
- - 90 A
- - 360
- 0.95 1.3 V
- 35 - ns
Reverse recovery charge2)
Q rr
- 35 - nC
1) Current is limited by bondwire; with an R thJC = 1.3K/W the chip is able to carry 122A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2008-08-01



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