DatasheetsPDF.com

Power-Transistor. IPD096N08N3G Datasheet

DatasheetsPDF.com

Power-Transistor. IPD096N08N3G Datasheet






IPD096N08N3G Power-Transistor. Datasheet pdf. Equivalent




IPD096N08N3G Power-Transistor. Datasheet pdf. Equivalent





Part

IPD096N08N3G

Description

Power-Transistor



Feature


OptiMOS(TM)3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC conve rters • Excellent gate charge x R DS( on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb -free plating; RoHS compliant • Quali fied according to JEDEC1) for target ap plications • Halogen-free according t o IEC61249-2-21 Type IPD096N08N3.
Manufacture

Infineon Technologies

Datasheet
Download IPD096N08N3G Datasheet


Infineon Technologies IPD096N08N3G

IPD096N08N3G; G IPD096N08N3 G Product Summary VDS R DS(on),max ID 80 V 9.6 mW 73 A Packag e Marking PG-TO252-3 096N08N Maximum ratings, at T j=25 °C, unless otherwis e specified Parameter Symbol Conditio ns Continuous drain current I D T C=2 5 °C2) T C=100 °C Pulsed drain curr ent2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=46 A, R GS=25 W Gate source .


Infineon Technologies IPD096N08N3G

voltage V GS Power dissipation P tot T C=25 °C Operating and storage tempe rature T j, T stg IEC climatic categor y; DIN IEC 68-1 1)J-STD20 and JESD22 2 ) See figure 3 for more detailed inform ation 3) See figure 13 for more detaile d information Rev. 2.2 page 1 Value 73 52 292 90 ±20 100 -55 ... 175 55/17 5/56 Unit A mJ V W °C 2014-05-19 Pa rameter Symbol Condi.


Infineon Technologies IPD096N08N3G

tions Thermal characteristics Thermal resistance, junction - case Thermal res istance, junction - ambient R thJC R t hJA minimal footprint 6 cm2 cooling ar ea4) IPD096N08N3 G min. Values typ. Unit max. - - 1.5 K/W - - 75 - - 50 Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate thresh.

Part

IPD096N08N3G

Description

Power-Transistor



Feature


OptiMOS(TM)3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC conve rters • Excellent gate charge x R DS( on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb -free plating; RoHS compliant • Quali fied according to JEDEC1) for target ap plications • Halogen-free according t o IEC61249-2-21 Type IPD096N08N3.
Manufacture

Infineon Technologies

Datasheet
Download IPD096N08N3G Datasheet




 IPD096N08N3G
OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPD096N08N3 G
IPD096N08N3 G
Product Summary
VDS
RDS(on),max
ID
80 V
9.6 mW
73 A
Package
Marking
PG-TO252-3
096N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=46 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
73
52
292
90
±20
100
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2014-05-19




 IPD096N08N3G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area4)
IPD096N08N3 G
min.
Values
typ.
Unit
max.
- - 1.5 K/W
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=46 µA
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
V DS=80 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=46 A
V GS=6 V, I D=23 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=46 A
80
2
-
-
-
-
-
-
30
- -V
2.8 3.5
0.1 1 µA
10 100
1 100 nA
7.9 9.6 mW
10.5 17.8
1.6 - W
60 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2014-05-19




 IPD096N08N3G
Parameter
Symbol Conditions
IPD096N08N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=40 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=40 A, R G,ext=1.6 W
-
-
-
-
-
-
-
1810
490
20
13
30
23
5
2410 pF
652
-
- ns
-
-
-
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 9 - nC
Q gd
Q sw
V DD=40 V, I D=46 A,
V GS=0 to 10 V
Qg
-
-
-
5-
10 -
26 35
V plateau
- 5.2 - V
Q oss
V DD=40 V, V GS=0 V
-
35 47 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=46 A,
T j=25 °C
t rr V R=40 V, I F=40A,
Q rr di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
- - 74 A
- - 296
- 1.0 1.2 V
- 57 - ns
- 91 - nC
Rev. 2.2
page 3
2014-05-19



Recommended third-party IPD096N08N3G Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)