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Power MOSFET. IRF9610S Datasheet |
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www.vishay.com
IRF9610S, SiHF9610S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 200
VGS = - 10 V
Qg (Max.) (nC)
11
Qgs (nC)
Qgd (nC)
7
4
Configuration
Single
D2PAK (TO-263)
S
3
G
GD
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical surface
mount application.
D2PAK (TO-263)
SiHF9610S-GE3
SiHF9610STRR-GE3
SiHF9610STRL-GE3
IRF9610SPbF
SiHF9610S-E3
IRF9610STRRPbF
IRF9610STRLPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)d
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)d
Peak Diode Recovery dV/dtb
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VDS
VGS
ID
IDM
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. ISD - 1.8 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 1.8
-1
-7
0.16
0.025
20
3
-5
- 55 to + 150
300c
UNIT
V
A
W/°C
W
V/ns
°C
S12-1558-Rev. D, 02-Jul-12
1
Document Number: 91081
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
IRF9610S, SiHF9610S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
6.4
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 0.90 Ab
VDS = - 50 V, ID = - 0.90 Ab
- 200
-
-2
-
-
-
-
0.90
-
- 0.23
-
-
-
-
-
-
-
-
-4
± 100
- 100
- 500
3
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = - 25 V,
f = 1 MHz, see fig. 10
VGS = - 10 V
ID = - 3.5 A, VDS = - 160 V,
see fig. 11 and 18b
VDD = - 100 V, ID = - 0.90 A,
RG = 50 , RD = 110 , see fig. 17b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
170 -
50 - pF
15 -
- 11
- 7 nC
-4
8-
15 -
ns
1-
8-
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - - 1.8
A
- - -7
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = - 1.8 A, VGS = 0 Vb
-
-
- 5.8
V
trr
TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/μsb
-
240 360 ns
Qrr - 1.7 2.6 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width 300 μs; duty cycle 2 %.
S12-1558-Rev. D, 02-Jul-12
2
Document Number: 91081
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9610S, SiHF9610S
Vishay Siliconix
- 2.40
- 1.92
VGS = - 10, - 9, - 8, - 7 V
- 2.40
- 1.92
VGS = - 10, - 9, - 8 V
-7V
- 1.44
-6V
- 0.96
- 0.48
-5V
80 µs Pulse Test
-4V
0.00
0
- 10 - 20 - 30 - 40 - 50
91081_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
- 1.44
-6V
- 0.96
- 0.48
-5V
0.00
0
80 µs Pulse Test
-2 -4 -6
-4V
- 8 - 10
91081_03
VDS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
- 2.40
- 1.92
- 1.44
TJ = - 55 °C
TJ = 25 °C
TJ = 125 °C
- 0.96
- 0.48
0.00
0
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
- 2 - 4 - 6 - 8 - 10
91081_02
VGS, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
102
Operation in this area limited
5 by RDS(on)
2
10
5
100 µs
2
1 1 ms
5
2
0.1
1
2
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
5 10 2
5 102 2
5 103
91081_04
Negative VDS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
2.0
1.0
0.5 D = 0.5
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.02 0.01
0.01
10-5
2
Single Pulse (Transient
Thermal Impedence)
5 10-4 2
5 10-3 2
5 10-2 2
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Per Unit Base = RthJC = 6.4 °C/W
3. TJM - TC = PDM ZthJC(t)
5 0.1 2
5 1.0 2
5 10
91081_05
t1, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to.Case vs. Pulse Duration
S12-1558-Rev. D, 02-Jul-12
3
Document Number: 91081
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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