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2SC2995. C2995 Datasheet

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2SC2995. C2995 Datasheet






C2995 2SC2995. Datasheet pdf. Equivalent




C2995 2SC2995. Datasheet pdf. Equivalent





Part

C2995

Description

2SC2995



Feature


TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, M IX, OSC, IF High Frequency Amplifier Ap plications 2SC2995 Unit: mm · High s tability oscillation voltage on FM loca l oscillator. · Recommend FM/AM RF, MI X, OSC and IF. Maximum Ratings (Ta = 2 5°C) Characteristics Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Collec.
Manufacture

Toshiba Semiconductor

Datasheet
Download C2995 Datasheet


Toshiba Semiconductor C2995

C2995; tor current Base current Collector power dissipation Junction temperature Stora ge temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 5 0 10 200 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― T OSHIBA 2-4E1A Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Collector cut-off curre.


Toshiba Semiconductor C2995

nt Emitter cut-off current DC current ga in Reverse transfer capacitance Transit ion frequency Collector-base time const ant Noise figure Power gain Oscillation output voltage ICBO VCB = 40 V, IE = 0 IEBO VEB = 4 V, IC = 0 hFE (Note) VCE = 6 V, IC = 1 mA Cre fT Cc・rbb ’ NF Gpe VOSC VCE = 6 V, f = 1 MHz V CE = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA, f = 30 MHz VCC = .


Toshiba Semiconductor C2995

6 V, IE = -1 mA, f = 100 MHz (Figure 1) VCC = 6 V, f = 100 MHz (Figure 2) Note : hFE classification R: 40~80, O: 70~14 0, Y: 120~240 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.5 mA 40 ¾ 240 ¾ 0.9 1. 3 pF 150 350 ¾ MHz ¾ 15 30 ps ¾ 4.0 ¾ dB ¾ 15 ¾ dB ¾ 150 ¾ mV 1 2003- 03-19 2SC2995 L1: 0.8 mmf silver plate d copper wire, 4 T, 10ID, 8 length Figu re 1 NF, Gpe Test Circuit L1: 0..

Part

C2995

Description

2SC2995



Feature


TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, M IX, OSC, IF High Frequency Amplifier Ap plications 2SC2995 Unit: mm · High s tability oscillation voltage on FM loca l oscillator. · Recommend FM/AM RF, MI X, OSC and IF. Maximum Ratings (Ta = 2 5°C) Characteristics Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Collec.
Manufacture

Toshiba Semiconductor

Datasheet
Download C2995 Datasheet




 C2995
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2995
FM/AM RF, MIX, OSC, IF
High Frequency Amplifier Applications
2SC2995
Unit: mm
· High stability oscillation voltage on FM local oscillator.
· Recommend FM/AM RF, MIX, OSC and IF.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
40
30
4
50
10
200
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Oscillation output voltage
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 4 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 1 mA
Cre
fT
Ccrbb’
NF
Gpe
VOSC
VCE = 6 V, f = 1 MHz
VCE = 6 V, IE = -1 mA
VCB = 6 V, IE = -1 mA, f = 30 MHz
VCC = 6 V, IE = -1 mA, f = 100 MHz
(Figure 1)
VCC = 6 V, f = 100 MHz (Figure 2)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.5 mA
40 ¾ 240
¾ 0.9 1.3 pF
150 350 ¾ MHz
¾ 15 30 ps
¾ 4.0 ¾ dB
¾ 15 ¾ dB
¾ 150 ¾ mV
1 2003-03-19




 C2995
2SC2995
L1: 0.8 mmf silver plated copper wire, 4 T, 10ID, 8 length
Figure 1 NF, Gpe Test Circuit
L1: 0.8 mmf silver plated copper wire, 4 T, 10ID, 8 length
Figure 2 VOSC Test Circuit
2 2003-03-19




 C2995
2SC2995
3 2003-03-19



Recommended third-party C2995 Datasheet






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