FEATURES
High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=14.5dB (Typ.) High PAE: ηadd=47% (Typ.) Hermetic Metal/Ceramic (SMT) Package
Tape and Reel Available
FLU10XM
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series t...
