double diode. BAV70 Datasheet

BAV70 diode. Datasheet pdf. Equivalent

BAV70 Datasheet
Recommendation BAV70 Datasheet
Part BAV70
Description High-speed double diode
Feature BAV70; www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV70 High-speed doubl.
Manufacture Philips
Datasheet
Download BAV70 Datasheet




Philips BAV70
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV70
High-speed double diode
Product specification
Supersedes data of 1997 Nov 24
1999 May 05
www.DataSheet4U.com



Philips BAV70
www.DataSheet4U.com
Philips Semiconductors
High-speed double diode
Product specification
BAV70
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 70 V
Repetitive peak reverse voltage:
max. 75 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The BAV70 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common cathode
handbook, halfpage
3
3
1
2
1
Top view
2
MAM383
Marking code: A4p = made in Hong Kong. A4t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
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MIN.
65
MAX.
85
75
215
125
450
4
1
0.5
250
+150
150
UNIT
V
V
mA
mA
mA
A
A
A
mW
°C
°C
1999 May 05
2



Philips BAV70
www.DataSheet4U.com
Philips Semiconductors
High-speed double diode
Product specification
BAV70
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
trr reverse recovery time
Vfr forward recovery voltage
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
715
855
1
1.25
30
2.5
60
100
1.5
4
1.75
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
360
500
UNIT
K/W
K/W
www.DataSheet4U.com
1999 May 05
3







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