Switching Diode. BAV70 Datasheet

BAV70 Diode. Datasheet pdf. Equivalent

BAV70 Datasheet
Recommendation BAV70 Datasheet
Part BAV70
Description 225mW SMD Switching Diode
Feature BAV70; Small Signal Product FEATURES 225mW SMD Switching Diode - Fast switching speed - Surface mount de.
Manufacture Taiwan Semiconductor
Datasheet
Download BAV70 Datasheet




Taiwan Semiconductor BAV70
Small Signal Product
FEATURES
225mW SMD Switching Diode
- Fast switching speed
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
BAW56, BAV70, BAV99
Taiwan Semiconductor
MECHANICAL DATA
- Case: SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
Peak repetitive reverse voltage
Repetitive peak forward current
Mean forward current
Non-repetitive peak forward
surge current
Pulse Width=1 sec
Pulse Width=1 µsec
PD
VRRM
IFRM
IO
IFSM
225
70
450
200
0.5
2
Thermal resistance form junction to ambient
Junction and storage temperature range
RθJA
TJ , TSTG
556
- 55 to + 150
UNIT
mW
V
mA
mA
A
oC/W
oC
PARAMETER
Reverse breakdown voltage
Forward voltage
Reverse leakage current
Junction capacitance
IR = 100 µA
IF = 50 mA
IF = 150 mA
VR = 70 V
VR = 0 V,
f = 1 MHz
BAW56, BAV70
BAV99
Reverse revovery time
IF = IR = 10 mA, RL = 100 , IRR = 1 mA
SYMBOL
V(BR)
VF
IR
CJ
trr
MIN
70
-
-
-
-
-
-
MAX
-
1.00
1.25
2.50
2
1.5
6
UNIT
V
V
µA
pF
pF
ns
Document Number: DS_S1404011
Version: H14



Taiwan Semiconductor BAV70
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
1000
Fig. 1 Typucal Forward Characteristics
100
10
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage(V)
2
Fig. 3 Power Dissipation Derating Curve
250
200
150
100
50
0
0 25 50 75 100 125 150
Ambient Temperature (oC)
BAW56, BAV70, BAV99
Taiwan Semiconductor
10000
Fig. 2 Leakage Current VS. Junction Temperature
1000
VR=20V
Typical
100
10
1
0 20 40 60 80 100 120 140 160 180 200
Junction Temperature (oC)
Document Number: DS_S1404011
Version: H14



Taiwan Semiconductor BAV70
Small Signal Product
BAW56, BAV70, BAV99
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MANUFACTURE
CODE
BAW56
PACKING
CODE
GREEN
COMPOUND
CODE
PACKAGE
RF SOT-23
PACKING
3K / 7" Reel
MARKING
A1
BAV70
RF
SOT-23
3K / 7" Reel
A4
BAV99
BAW56
(Note)
RF
SOT-23
3K / 7" Reel
A7
RF
G
SOT-23
3K / 7" Reel
A1
BAV70
RF
G
SOT-23
3K / 7" Reel
A4
BAV99
RF G
Note: Manufacture special control, if empty means no special control requirement.
SOT-23
3K / 7" Reel
A7
EXAMPLE
PREFERRED P/N PART NO.
MANUFACTURE
CODE
BAV99 RF
BAV99-B0 RF
BAV99-D0 RF
BAV99 RFG
BAV99-B0 RFG
BAV99-D0 RFG
BAV99
BAV99
BAV99
BAV99
BAV99
BAV99
B0
D0
B0
D0
PACKING CODE
RF
RF
RF
RF
RF
RF
GREEN
COMPOUND
CODE
G
G
G
DESCRIPTION
Green compound
Green compound
Green compound
Document Number: DS_S1404011
Version: H14







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