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1SS294

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching z Low forward voltage z Low reverse surrent z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC−59 1SS294 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage V...



Toshiba Semiconductor

1SS294

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