9N90-Q Datasheet PDF | Unisonic Technologies





9N90-Q Datasheet PDF Download

Part Number 9N90-Q
Description N-CHANNEL POWER MOSFET
Manufacture Unisonic Technologies
Total Page 6 Pages
PDF Download Download 9N90-Q Datasheet PDF

Features: UNISONIC TECHNOLOGIES CO., LTD 9N90-Q 9A , 900V N-CHANNEL POWER MOSFET  DESCR IPTION The UTC 9N90-Q uses UTC’s adva nced proprietary, planar stripe, DMOS t echnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app lications.  FEATURES * RDS(ON) < 1.4 Ω @ VGS = 10V, ID = 4.5A * Fast Switc hing Capability * Avalanche Energy Spec ified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power M OSFET 1.Gate 3.Source  ORDERING I NFORMATION Ordering Number Lead Free Halogen Free 9N90L-TA3-T 9N90G-TA3-T 9N90L-T3P-T 9N90G-T3P-T Package TO- 220 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.unis onic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A 93.B 9N90-Q Power MOSFET  ABSOLUT E MAXIMUM RATING (TC =25°C, unless oth erwise specified) PARAMETER SYMBOL R ATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 .

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9N90-Q datasheet
UNISONIC TECHNOLOGIES CO., LTD
9N90-Q
9A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N90-Q uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 1.4@ VGS = 10V, ID = 4.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9N90L-TA3-T
9N90G-TA3-T
9N90L-T3P-T
9N90G-T3P-T
Package
TO-220
TO-3P
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A93.B

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