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1SV229

Toshiba Semiconductor
Part Number 1SV229
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV229 1SV229 VCO for UHF Band Radio • Ultra low ser...
Datasheet PDF File 1SV229 PDF File

1SV229
1SV229

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV229 1SV229 VCO for UHF Band Radio • Ultra low series resistance: rs = 0.
2 Ω (typ.
) • Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum rat...


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