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1SV279

Toshiba Semiconductor

Variable Capacitance Diode


Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 1SV279 VCO for V/UHF Band Radio High capacitance ratio: C2V / C10V = 2.5 (typ.) Low series resistance: rs = 0.2 Ω (typ.) Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temper...



Toshiba Semiconductor

1SV279

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