PD -95597A
IRG4IBC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High switching speed optimized for up to 25kHz with low VCE(on)
Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEX...
