FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86326
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 37 A, 23 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A High performance trench technology for extremely low rDS(on) ...
