switching diodes. BAS21W Datasheet

BAS21W diodes. Datasheet pdf. Equivalent


NXP BAS21W
BAS21W series
High-voltage switching diodes
Rev. 01 — 9 October 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a very small Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
Configuration
BAS21W
BAS21AW
BAS21SW
single
dual common anode
dual series
Package
NXP
SOT323
JEDEC
SC-70
Package
configuration
very small
1.2 Features
I High switching speed: trr 50 ns
I Low leakage current
I High reverse voltage: VR 250 V
I Low capacitance: Cd 2 pF
I Very small SMD plastic package
I AEC-Q101 qualified
1.3 Applications
I High-speed switching
I General-purpose switching
I Voltage clamping
I Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 200 V
Min Typ
[1] -
-
-
[2] -
-
-
-
-
[1] Single diode loaded.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
225
100
250
50
Unit
mA
nA
V
ns


BAS21W Datasheet
Recommendation BAS21W Datasheet
Part BAS21W
Description High-voltage switching diodes
Feature BAS21W; BAS21W series High-voltage switching diodes Rev. 01 — 9 October 2009 Product data sheet 1. Product.
Manufacture NXP
Datasheet
Download BAS21W Datasheet




NXP BAS21W
NXP Semiconductors
BAS21W series
High-voltage switching diodes
2. Pinning information
Table 3. Pinning
Pin Description
BAS21W
1 anode
2 not connected
3 cathode
BAS21AW
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
BAS21SW
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
Simplified outline Graphic symbol
3
12
3
12
006aaa764
3
12
3
12
006aab099
3
12
3
12
006aaa763
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
BAS21W
SC-70
plastic surface-mounted package; 3 leads
BAS21AW
BAS21SW
Version
SOT323
BAS21W_SER_1
Product data sheet
Rev. 01 — 9 October 2009
© NXP B.V. 2009. All rights reserved.
2 of 11



NXP BAS21W
NXP Semiconductors
BAS21W series
High-voltage switching diodes
4. Marking
Table 5. Marking codes
Type number
BAS21W
BAS21AW
BAS21SW
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
X4*
X6*
X5*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VR reverse voltage
IF forward current
-
[1] -
[2] -
IFRM
repetitive peak forward
current
-
IFSM
Per device
non-repetitive peak forward
current
square wave
tp = 1 µs
tp = 100 µs
tp = 10 ms
[3]
-
-
-
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 °C
[4] -
-
55
65
Max Unit
250 V
225 mA
125 mA
625 mA
9A
3A
1.7 A
200
150
+150
+150
mW
°C
°C
°C
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj = 25 °C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAS21W_SER_1
Product data sheet
Rev. 01 — 9 October 2009
© NXP B.V. 2009. All rights reserved.
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