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EFFECT TRANSISTOR. KF3N60P Datasheet

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EFFECT TRANSISTOR. KF3N60P Datasheet






KF3N60P TRANSISTOR. Datasheet pdf. Equivalent




KF3N60P TRANSISTOR. Datasheet pdf. Equivalent





Part

KF3N60P

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR



Feature


SEMICONDUCTOR TECHNICAL DATA KF3N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P This plan ar stripe MOSFET has better characteris tics, such as fast switching time, low on resistance, low gate charge and exce llent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEA TURES VDSS= 600V, .
Manufacture

KEC

Datasheet
Download KF3N60P Datasheet


KEC KF3N60P

KF3N60P; ID= 3A Drain-Source ON Resistance : RDS( ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MA XIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF3N60P KF3N60F UNIT Drain-Source Voltage VDSS 600 Gate-S ource Voltage VGSS 30 @TC=25 Drain C urrent @TC=100 Pulsed (Note1) Single Pu lsed Avalanche Energy (Note 2) Repetiti ve Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (N.


KEC KF3N60P

ote 3) ID IDP EAS EAR dv/dt 3 3* 1.9 1 .9* 7 7* 120 3.2 4.5 Drain Power Dissi pation Tc=25 Derate above 25 PD 73 0 .58 31 0.25 Maximum Junction Temperat ure Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.7 Thermal Resistance, Junctio n-toAmbient RthJA 62.5 * : Drain cur rent limited by ma.


KEC KF3N60P

ximum junction temperature. 4 62.5 V V A mJ mJ V/ns W W/ /W /W PIN CONNECTIO N (KF3N60P, KF3N60F) D Q K A E I K M D NN F G B Q L J O C P H 123 1. GA TE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0. 1 3.6 +_ 0.2 2.8+_ 0.1 3.7 0.5+0.1/-0.0 5 1.5 13.08+_ 0.3 1.46 1.4 +_ 0.1 1.27+ _ 0.1 2.54 +_ 0.2 .

Part

KF3N60P

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR



Feature


SEMICONDUCTOR TECHNICAL DATA KF3N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P This plan ar stripe MOSFET has better characteris tics, such as fast switching time, low on resistance, low gate charge and exce llent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEA TURES VDSS= 600V, .
Manufacture

KEC

Datasheet
Download KF3N60P Datasheet




 KF3N60P
SEMICONDUCTOR
TECHNICAL DATA
KF3N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KF3N60P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 3A
Drain-Source ON Resistance : RDS(ON)=3.3
Qg(typ) = 8.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
KF3N60P
KF3N60F
UNIT
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
3 3*
1.9 1.9*
7 7*
120
3.2
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
73
0.58
31
0.25
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.7
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
4
62.5
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
(KF3N60P, KF3N60F)
D
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF3N60F
AC
E
LM
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
* Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
2010. 12. 20
S
Revision No : 0
1/2




 KF3N60P
KF3N60P/F
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.5A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=3A
VGS=10V
(Note4,5)
VDD=300V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
IS
VGS<Vth
ISP
VSD IS=3A, VGS=0V
trr IS=3A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=24.5mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600 - - V
- 0.61 - V/
- - 10
2.5 - 4.5 V
- - 100 nA
- 2.8 3.3
- 8.5 -
- 1.8 -
- 3.6 -
- 25 -
- 25 -
- 40 -
- 20 -
- 355 -
- 45 -
- 4.4 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
ns
- 1.5 -
C
1
1
KF3N60
P 001
2
KF3N60
F 001
2
1 PRODUCT NAME
2 LOT NO
2010. 12. 20
Revision No : 0
2/2




 KF3N60P
K3N60P/F
Fig1. ID - VDS
101 VGS=10V
VGS=7V
100 VGS=5V
10-1
10-2
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
TC=100 C
25 C
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source - Drain Voltage VSD (V)
2010. 12. 20
Revision No : 0
VDS=30V
101
Fig2. ID - VGS
TC=100 C
100 25 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
6.0
5.0
VGS=6V
4.0
VGS=10V
3.0
2.0
1.0
0
01 23 45 6
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS =10V
2.5 IDS = 1.5A
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
37






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