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EFFECT TRANSISTOR. KF3N50FS Datasheet

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EFFECT TRANSISTOR. KF3N50FS Datasheet






KF3N50FS TRANSISTOR. Datasheet pdf. Equivalent




KF3N50FS TRANSISTOR. Datasheet pdf. Equivalent





Part

KF3N50FS

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Manufacture

KEC

Datasheet
Download KF3N50FS Datasheet


KEC KF3N50FS

KF3N50FS; SEMICONDUCTOR TECHNICAL DATA KF3N50FZ/F S N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stri pe MOSFET has better characteristics, s uch as fast switching time, fast revers e recovery time, low on resistance, low gate charge and excellent avalanche ch aracteristics. It is mainly suitable fo r electronic ballast and switching mode power supplies. .


KEC KF3N50FS

FEATURES VDSS= 500V, ID= 3A Drain-Sourc e ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V trr(typ) = 1 20ns (KF3N50FS) trr(typ) = 300ns (KF3N5 0FZ) MAXIMUM RATING (Tc=25 ) CHARACTE RISTIC SYMBOL Drain-Source Voltage V DSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Si ngle Pulsed Avalanche Energy (Note 2) R epetitive Avalanch.


KEC KF3N50FS

e Energy (Note 1) Peak Diode Recovery dv /dt (Note 3) ID IDP EAS EAR dv/dt Dra in Power Dissipation Tc=25 Derate abov e 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Chara cteristics Tj Tstg Thermal Resistance , Junction-to-Case RthJC Thermal Resis tance, Junction-toAmbient RthJA * : D rain Current limited by maximum junctio n temperature PIN.



Part

KF3N50FS

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Manufacture

KEC

Datasheet
Download KF3N50FS Datasheet




 KF3N50FS
SEMICONDUCTOR
TECHNICAL DATA
KF3N50FZ/FS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 3A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50FS)
trr(typ) = 300ns (KF3N50FZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain Current limited by maximum junction temperature
PIN CONNECTION
(KF3N50FZ/FS)
D
RATING
500
30
3*
1.8*
9*
110
4
10
25
0.2
150
-55 150
5.0
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
AC
E
LM
D
NN
123
R
H
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
G
S
2014. 6. 29
Revision No : 1
1/6





 KF3N50FS
KF3N50FZ/FS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=500V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 25V, VDS=0V
RDS(ON)
VGS=10V, ID=1.5A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=400V, ID=3A
VGS=10V
(Note4,5)
VDD=250V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
KF3N50FZ
KF3N50FS
KF3N50FZ
KF3N50FS
IS
VGS<Vth
ISP
VSD IS=3A, VGS=0V
trr
IS=3A, VGS=0V,
dIs/dt=100A/
Qrr
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=22mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
500 - - V
- 0.55 - V/
- - 10
2.5 - 4.5 V
- - 10
- 2.0 2.5
- 8.0 -
- 2.0 -
- 3.5 -
- 15 -
- 20 -
- 25 -
- 20 -
- 350 -
- 45 -
- 4.5 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
- 120 -
ns
- 1.1 -
- 0.25 -
C
1
KF3N50
FZ 001
1
KF3N50
2 FS 001
2
1 PRODUCT NAME
2 LOT NO
2014. 6. 29
Revision No : 1
2/6





 KF3N50FS
KF3N50FZ/FS
Fig1. ID - VDS
101
VGS=10V
VGS=7V
100
VGS=5V
10-1
10-2
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
TC=100 C
25 C
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source - Drain Voltage VSD (V)
2014. 6. 29
Revision No : 1
VDS=30V
101
Fig2. ID - VGS
TC=100 C
25 C
100
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
6
5
4
3 VGS=7V
2 VGS=10V
1
0
01 23 45 6
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS =10V
2.5 IDS = 1.5A
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
3/6



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