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Mode MOSFET. PJS6400 Datasheet

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Mode MOSFET. PJS6400 Datasheet






PJS6400 MOSFET. Datasheet pdf. Equivalent




PJS6400 MOSFET. Datasheet pdf. Equivalent





Part

PJS6400

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJS6400 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.4A Features  RDS(ON) , VGS@10V, ID@6.4 A<37mΩ  RDS(ON) , VGS@4.5V, ID@4.5 A<43mΩ  RDS(ON) , VGS@2.5V, ID@2.9 A<59mΩ  Advanced Trench Process Te chnology  Specially Designed for Swi tch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/6 5/EU directive.  Green molding comp.
Manufacture

Pan Jit International

Datasheet
Download PJS6400 Datasheet


Pan Jit International PJS6400

PJS6400; ound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L-1 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. We ight: 0.0005 ounces, 0.014 grams  Ma rking: S00 SOT-23 6L-1 Unit : inch(mm ) Maximum Ratings and Thermal Char acteristics o (TA=25 C unless otherw ise noted) PARAMETER Drain-Source Vo ltage Gate-Source Voltage.


Pan Jit International PJS6400

Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Der ate above 25oC Operating Junction and Storage Temperature Range Typical Ther mal resistance - Junction to Ambient (N ote 3) SYMBOL VDS VGS ID IDM PD TJ,TST G RθJA LIMIT 30 +12 6.4 25.6 2 16 -55 ~150 62.5 UNITS V V A A W mW/ oC oC oC /W December 31,2014-REV.03 Page 1 PP JS6400 Electrical .


Pan Jit International PJS6400

Characteristics o (TA=25 C unless ot herwise noted) PARAMETER Static Drain -Source Breakdown Voltage Gate Threshol d Voltage Drain-Source On-State Resista nce Zero Gate Voltage Drain Current Gat e-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Dra in Charge Input Capacitance Output Capa citance Reverse Transfer Capacitance Sw itching Turn-On De.

Part

PJS6400

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJS6400 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.4A Features  RDS(ON) , VGS@10V, ID@6.4 A<37mΩ  RDS(ON) , VGS@4.5V, ID@4.5 A<43mΩ  RDS(ON) , VGS@2.5V, ID@2.9 A<59mΩ  Advanced Trench Process Te chnology  Specially Designed for Swi tch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/6 5/EU directive.  Green molding comp.
Manufacture

Pan Jit International

Datasheet
Download PJS6400 Datasheet




 PJS6400
PPJS6400
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
6.4A
Features
RDS(ON) , VGS@10V, ID@6.4A<37m
RDS(ON) , VGS@4.5V, ID@4.5A<43m
RDS(ON) , VGS@2.5V, ID@2.9A<59m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: S00
SOT-23 6L-1
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+12
6.4
25.6
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
December 31,2014-REV.03
Page 1




 PJS6400
PPJS6400
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=10V, ID=6.4A
VGS=4.5V, ID=4.5A
VGS=2.5V, ID=2.9A
VDS=30V, VGS=0V
VGS=+12V, VDS=0V
VDS=15V, ID=6.4A,
VGS=10V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=15V, ID=6.4A,
VGS=10V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
30 -
-
0.5 0.85 1.3
- 29 37
- 32 43
V
V
mΩ
- 42 59
- 0.01 1
uA
- +10 +100 nA
-6-
- 1.3 -
- 1.7 -
- 490 -
- 44 -
- 32 -
nC
pF
- 3.2 -
- 63 -
ns
- 79 -
- 81 -
- - 2.0 A
- 0.74 1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
December 31,2014-REV.03
Page 2




 PJS6400
PPJS6400
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
December 31,2014-REV.03
Fig.6 Body Dlode Characterlslcs
Page 3



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