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Mode MOSFET. PJS6415AE Datasheet

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Mode MOSFET. PJS6415AE Datasheet






PJS6415AE MOSFET. Datasheet pdf. Equivalent




PJS6415AE MOSFET. Datasheet pdf. Equivalent





Part

PJS6415AE

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJS6415AE 20V P-Channel Enhancement Mo de MOSFET – ESD Protected Voltage - 20 V Current -4.9A SOT-23 6L-1 Featu res  RDS(ON) , VGS@-10V, ID@-4.9A<6 0mΩ  RDS(ON) , VGS@-4.5V, ID@-4.2A <70mΩ  RDS(ON) , VGS@-2.5V, ID@-3. 1A<96mΩ  Advanced Trench Process T echnology  Specially Designed for Sw itch Load, PWM Application, etc  ESD Protected 2KV HBM  Lead free in comp.
Manufacture

Pan Jit International

Datasheet
Download PJS6415AE Datasheet


Pan Jit International PJS6415AE

PJS6415AE; ly with EU RoHS 2011/65/EU directives. Green molding compound as per IEC612 49 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L-1 Package  Term inals : Solderable per MIL-STD-750, Met hod 2026  Approx. Weight: 0.0003 oun ces, 0.0084 grams  Marking: S5E Uni t : inch(mm) Maximum Ratings and Th ermal Characteristics o (TA=25 C unl ess otherwise noted) PARA.


Pan Jit International PJS6415AE

METER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25 oC Derate above 25oC Operating Junctio n and Storage Temperature Range Typica l Thermal resistance - Junction to Ambi ent (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +12 -4.9 -19.6 2 16 -55~150 62.5 UNITS V V A A W mW/ oC oC oC/W April .


Pan Jit International PJS6415AE

29,2015-REV.01 Page 1 PPJS6415AE Elec trical Characteristics o (TA=25 C un less otherwise noted) PARAMETER Stat ic Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Cur rent Gate-Source Leakage Current Dynami c (Note 5) Total Gate Charge Gate-Sourc e Charge Gate-Drain Charge Input Capaci tance Output Capac.

Part

PJS6415AE

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJS6415AE 20V P-Channel Enhancement Mo de MOSFET – ESD Protected Voltage - 20 V Current -4.9A SOT-23 6L-1 Featu res  RDS(ON) , VGS@-10V, ID@-4.9A<6 0mΩ  RDS(ON) , VGS@-4.5V, ID@-4.2A <70mΩ  RDS(ON) , VGS@-2.5V, ID@-3. 1A<96mΩ  Advanced Trench Process T echnology  Specially Designed for Sw itch Load, PWM Application, etc  ESD Protected 2KV HBM  Lead free in comp.
Manufacture

Pan Jit International

Datasheet
Download PJS6415AE Datasheet




 PJS6415AE
PPJS6415AE
20V P-Channel Enhancement Mode MOSFET ESD Protected
Voltage
-20 V Current
-4.9A
SOT-23 6L-1
Features
RDS(ON) , VGS@-10V, ID@-4.9A<60m
RDS(ON) , VGS@-4.5V, ID@-4.2A<70m
RDS(ON) , VGS@-2.5V, ID@-3.1A<96m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
ESD Protected 2KV HBM
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: S5E
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+12
-4.9
-19.6
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
April 29,2015-REV.01
Page 1




 PJS6415AE
PPJS6415AE
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-4.9A
VGS=-4.5V, ID=-4.2A
VGS=-2.5V, ID=-3.1A
VGS=-1.8V, ID=-0.5A
VDS=-20V, VGS=0V
VGS=+8V, VDS=0V
VDS=-10V, ID=-4.9A,
VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V,
f=1.0MHZ
VDD=-10V, ID=-4.9A,
VGS=-4.5V,
RG=3Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-20 -
-
-0.5 -0.77 -1.2
- 50 60
- 58 70
- 80 96
- 140 180
-
-0.01
-1
- +6 +10
V
V
mΩ
uA
uA
- 6.9 -
- 1.5 -
- 1.9 -
- 602 -
- 70 -
- 47 -
- 8.8 -
- 66 -
- 29 -
- 14 -
nC
pF
ns
- - -1.5 A
-0.79 -1.0
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
5. Guaranteed by design, not subject to production testing
April 29,2015-REV.01
Page 2




 PJS6415AE
PPJS6415AE
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
April 29,2015-REV.01
Fig.6 Body Diode Characteristics
Page 3



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