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V10D202C

Vishay
Part Number V10D202C
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Apr 4, 2016
Detailed Description www.vishay.com V10D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier ...
Datasheet PDF File V10D202C PDF File

V10D202C
V10D202C

Overview
www.
vishay.
com V10D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D202C Anode 1 K Anode 2 Cathode ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A (TA = 125 °C) TJ max.
Package 2 x 5.
0 A 200 V 100 A 0.
67 V 175 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximu...


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