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FMMT634Q

Diodes

NPN DARLINGTON TRANSISTOR


Description
Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 100V  IC = 900mA high Continuous Collector Current  ICM = 5A Peak Pulse Current  625mW Power dissipation  hFE > 5k up to 2A for high current gain hold up  Complementary PNP Type: FMMT734Q  Totally Lead-F...



Diodes

FMMT634Q

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