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RQJ0601DGDQS

Part Number	RQJ0601DGDQS
Manufacturer	Renesas
Description	Silicon P-Channel MOS FET
Published	May 14, 2016
Detailed Description	RQJ0601DGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, I...
Datasheet	RQJ0601DGDQS PDF File

Overview

RQJ0601DGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.
4 A) • Low drive current • High speed switching • 4.
5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “DG”.
REJ03G1266-0300 Rev.
3.
00 Jun 05, 2006 2, 4 D 1.
Gate 1 G 2.
Drain 3.
Source 4.
Drain S 3 *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note1 (...

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RQJ0601DGDQS Silicon P-Channel MOS FET - Renesas

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