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2SK3060

NEC
Part Number 2SK3060
Manufacturer NEC
Description N-CHANNEL POWER MOS FET
Published May 27, 2016
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060...
Datasheet PDF File 2SK3060 PDF File

2SK3060
2SK3060

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX.
(VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX.
(VGS = 4.
0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP.
• Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3060 TO-220AB 2SK3060-S TO-262 2SK3060-ZJ 2SK3060-Z TO-263 TO-220SMDNote Note This package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS(AC) Gate to Source Voltage (VDS = 0 V) VGSS(DC) Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT Total Power Dissipation (TA = 25°C) PT Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS 60 ±20 +20, −10 ±70 ±210 70 1.
5 150 –55 to +150 35 122.
5 V V V A A W W °C °C A mJ (TO-220AB) (TO-262) Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 5 2.
Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D13099EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points.
© 1997,2000 2SK3060 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 35 A RDS(on)2 VGS = 4.
0 V, ID = 35 A Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA Forward Transfer Admittance | yfs | VDS = 10 V, ID = 35...


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