Silicon Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
Low reverse current: IR = 5 μA (max)
0.6±0.05
1SS420CT
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Maximum (peak) reverse voltage
Symbol VRM
Rating 35
Unit V
0.38
+0.02 -0.03
...
Similar Datasheet