DatasheetsPDF.com

MS1329

Advanced Power Technology
Part Number MS1329
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS
Published Jun 1, 2016
Detailed Description RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON...
Datasheet PDF File MS1329 PDF File

MS1329
MS1329


Overview
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.
0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.
5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters.
Emitter ballast resistors and gold metalitzation provide optimum VSWR capability.
MS1329 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS IC Power Dissipation Collector current TJ Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)