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2SA651

Inchange Semiconductor
Part Number 2SA651
Manufacturer Inchange Semiconductor
Description Silicon PNP Transistor
Published Jun 18, 2016
Detailed Description isc Silicon PNP Power Transistor 2SA651 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wid...
Datasheet PDF File 2SA651 PDF File

2SA651
2SA651


Overview
isc Silicon PNP Power Transistor 2SA651 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.
) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.
5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.
5A ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -2A; VCE= -5V COB Collector Output Capacitance IE=0; VCB= -5V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.
5A; VCE= -10V 2SA651 MIN TYP.
MAX UNIT -200 -150 V -5 V -2.
0 V -2.
5 V -0.
1 mA -0.
1 mA 30 150 500 pF 10 MHz Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or med...



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