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KMB4D5DN60QA

Part Number	KMB4D5DN60QA
Manufacturer	KEC
Description	Dual N-Channel MOSFET
Published	Jun 21, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet	KMB4D5DN60QA PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.
It is mainly suitable for load switch and Back light inverter.
FEATURES VDSS=60V, ID=4.
5A.
Drain-Source ON Resistance.
RDS(ON)=56m (Max.
) @ VGS=10V RDS(ON)=77m (Max.
) @ VGS=4.
5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25 Pulsed Drain Source Diode Forward Current Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj ...

Similar Datasheet

KMB4D5DN60QA Dual N-Channel MOSFET - KEC

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