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K2613

Part Number	K2613
Manufacturer	Toshiba Semiconductor
Description	2SK2613
Published	Jun 22, 2016
Detailed Description	www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching R...
Datasheet	K2613 PDF File

Overview

www.
DataSheet4U.
com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm · Low drain-source ON resistance: RDS (ON) = 1.
4 Ω (typ.
) · High forward transfer admittance: ïYfsï = 6.
0 S (typ.
) · Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) · Enhancement-model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repeti...

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