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KTB631K

KEC
Part Number KTB631K
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published Jun 22, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltag...
Datasheet PDF File KTB631K PDF File

KTB631K
KTB631K

Overview
SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC ICP Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Storage Temperature Range Tj Tstg RATING -120 -120 -5 -1 -2 1.
5 8 150 -55 150 UNIT V V V A W KTB631K EPITAXIAL PLANAR PNP TRANSISTOR A B C H J K D E F G L M N O P 12 3 1.
EMITTER 2.
COLLECTOR 3.
BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.
3 MAX 5.
8 0.
7 Φ3.
2+_ 0.
1 3.
5 11.
0 +_ 0.
3 2.
9 MAX 1.
0 MAX 1.
9 MAX 0.
75 +_ 0.
15 15.
50+_ 0.
5 2.
3 +_ 0.
1 0.
65 +_ 0.
15 1.
6 3.
4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Volta...


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