isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3582
DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability
Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain
NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
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