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2SC3585

Part Number	2SC3585
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 23, 2016
Detailed Description	isc Silicon NPN RF Transistor DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=...
Datasheet	2SC3585 PDF File

Overview

isc Silicon NPN RF Transistor DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.
5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forVHF, UHF and CATV high frequency wideband low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.
5 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation 200 mW ...

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