Silicon NPN Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1171
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 4.0V(Max.)@ IC= 2.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for h...
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