N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·High Voltage. ·High speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VG...
Inchange Semiconductor
2SK610 PDF File
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