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BU508AT

Part Number	BU508AT
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 26, 2016
Detailed Description	isc Silicon NPN Power Transistor BU508AT DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·H...
Datasheet	BU508AT PDF File

Overview

isc Silicon NPN Power Transistor BU508AT DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junc...

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