Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
BUY56
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V@ IC= 7A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIM...
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