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BUY57
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
BUY57 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.3V@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATING...
Inchange Semiconductor
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