N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
2SK637
FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for high voltage, high speed power switching
applications such as switching regulators, converters, solenoid...
Inchange Semiconductor
2SK637 PDF File
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