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2SK638

Part Number	2SK638
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jun 26, 2016
Detailed Description	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·100% a...
Datasheet	2SK638 PDF File

Overview

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 800 V ±20 V 3 A 80 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTIC...

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