N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900 (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high speed high current switching applications ·DC-DC converter and motor driver applications
ABSOLUTE MAXIMUM RATINGS(Ta=2...
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