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1N8033-GA

High Temperature Silicon Carbide Power Schottky Diode

Description

1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-1950...

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1N8033-GA High Temperature Silicon Carbide Power Schottky Diode - GeneSiC

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